Kinetic Monte-Carlo simulation of memristive resistance-switching devices

Sven Dirkmann, Jan Trieschmann, Mirko Hansen, Martin Ziegler, Hermann Kohlstedt, Thomas Mussenbrock

SPICE-Workshop on Bad Metal Behavior in Mott Systems, June 29 - July 2, 2015, Mainz, Germany


Abstract

Memristive resistance switching devices are promising candidates for application as neuromorphic circuit elements. In this context the key features are low fabrication cost, low power consumption, and scalability into the nanometer scale. The majority of these devices rely on ionic mechanisms, where the change in resistance is e.g. due to the formation and dissolution of conducting paths in solid state electrolytes. This phenomenon of switching which is driven by both electric fields and Joule heating, is still not fully understood. For instance, the dissolution of the conducting paths may or may not rely on a phase change such as the Mott transition. This contribution demonstrates and discusses the formation and dissolution of Ag filaments in an Ag/TiO2/Pt sandwich-like thin film system at experimental timescales by means of kinetic Monte Carlo simulations. The results are compared to experimental results. It is shown that the devices provide distinct and reliable ”on” and ”off” states, but that their dynamic range is limited.

tags: KMC, Memristive device