A Concentrated Model of the Double Barrier Memristive Device for LTSpice Simulations

Enver Solan, Sven Dirkmann, Martin Ziegler, Mirko Hansen, Hermann Kohlstedt, Thomas Mussenbrock, Karlheinz Ochs

Früh­jahrs­ta­gung der Deut­schen Phy­si­ka­li­schen Ge­sell­schaft, Dresden, Ger­ma­ny


The double barrier memristive device is a technical implementation of a memristive system. It consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-like contact. In principle, it is a nonlinear resistor with memory, whereby the resistance depends on energetic states at the interfacial barriers. This leads to a continuous resistance range, which is desired for neuromorphic applications. To understand the underlying physical and chemical phenomena, a distributed model of the device, using a kinetic Monte-Carlo simulation, has been implemented. Such simulations are very time-consuming and therefore not suitable for real-time implementations, e.g. for emulation purposes. Starting from the distributed model a concentrated model of the device with physically meaningful parameters has been developed. It can be used for reproducible analyses and emulation purposes. The concentrated model was verified by comparisons with Monte-Carlo simulations as well as with measurements.


tags: lumped element, Memristive, Simulation