The effect of the presheath on the ion angular distribution at the wafer surface

Jie Zheng, Ralf Peter Brinkmann, James P. McVittie

J. Vac. Sci. Technol. A 13, 859 (1995)


Knowledge of the ion angular distribution at the wafer plane in an etching plasma is critical for the modeling of the etched profiles. Previously this distribution was thought to be mainly influenced by the magnitude of the sheath voltage and by the collisions which ions encountered in the sheath. This work shows that the acceleration and collisions which the ions experience in the presheath region are also important in determining the ion angular distribution and in shaping the final etching profile.


tags: collisions, etched profiles, etching plasma, etching profile, ion angular distribution, presheath region, sheath voltage, wafer plane