Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As)

P.J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S.W. Koch, S. Tomic, S.A. Choulis, T.J.C. Hosea, E.P. O'Reilly, Martin R. Hofmann , J. Hader, J.V. Moloney

Sem. Science and Technol. 17, 830

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