A new Q-Enhancement Architecture for SAW-less Communication Receiver in 65-nm CMOS
Josef Hausner, Christoph Schmits, Tobias D. Werth
IEEE International Symposium on Radio-Frequency Integration Technology (RFIT); Singapur, 9.-11. Dezember 2009
A 2.5V second order RF bandpass filter is presented. A new Q-enhancement structure stacked on a LNA is fabricated in a 65-nm CMOS process with a die area of 1.1 mm x 1.1 mm. The frequency range is adjustable in a 25% range from 1.7 GHz to 2.2 GHz while the Q is adjustable up to 50. Q and the center frequency are adjusted by binary weighted switchable capacitors. The filter draws 42 mA including the buffers from a 2.5 V supply and has an input referred out-of-band 1-dB compression point of 0 dBm. The measured in-band NF is between 5.4 and 6.2 dB.