A Reduced-Fluid Dynamic Discharge Model for Applications in Technology-Oriented Computer-Aided Design

Ralf Peter Brinkmann, R. Fürst, C. Werner, Mathias Hierlemann

J. Electrochem. Soc., Volume 143, Issue 6


A new, numerically efficient model for the technology-oriented simulation of capacitively coupled radio frequency discharges in the plasma deposition regime (fRF = 13.56 MHz, p 10 Pa) is presented. The approach is based on the fact that the domain of the discharge can be clearly separated into the bulk, which amounts to nearly all of the volume and into relatively thin boundary sheaths at the electrodes and walls. Length and time-scale arguments are employed to reduce the complexity of the bulk description from a full two-moment, fluid-dynamic model to a level which is comparable to that of a conventional neutral gas simulation. Completed by the definition of appropriate boundary conditions which reflect the dynamics in the sheaths, we thereby obtain an effective drift-diffusion model which cuts the computational burden of discharge simulation by more than a factor of 100. In spite of its reduced complexity, our model shows good quantitative agreement with the predictions of conventional fluid-dynamic models. Thus, it seems possible, for the first time, to incorporate the simulation of plasma processes in the plasma-enhanced chemical vapor deposition regime into a commercially utilized environment for technology-oriented computer-aided design.


Tags: bulk, ccp, plasma deposition, technology-oriented