Subnanosecond High-Power Performance of a bistable optically controlled GaAs Switch

Ralf Peter Brinkmann, Stoudt, D. C, Roush, R. A, Mazzola, M. S, Zutavern, F. J, Loubriel, G. M

The 9th IEEE Pulsed Power Conference, Albuquerque, NM, 21-23 Jun. 1993


Results are presented which demonstrate the ability of the Bistable (or bulk) Optically controlled Semiconductor Switch (BOSS) to open against a rising electric field on the time scale of less than one nanosecond. The BOSS device is fabricated from semi-insulating, copper-compensate, silicon-doped GaAs.