course: Plasma Technology 2

number:
141284
teaching methods:
lecture with tutorials
media:
computer based presentation, black board and chalk
responsible person:
Prof. Dr.-Ing. Peter Awakowicz
Lecturers:
Prof. Dr.-Ing. Peter Awakowicz (ETIT), Patrick Hermanns (ETIT)
language:
german
HWS:
4
CP:
5
offered in:
summer term

dates in summer term

  • start: Wednesday the 22.04.2020
  • lecture Wednesdays: from 10:15 to 11.45 o'clock
  • tutorial Thursdays: from 08:15 to 09.45 o'clock

Exam

All statements pertaining to examination modalities (for the summer/winter term of 2020) are given with reservations. Changes due to new requirements from the university will be announced as soon as possible.

Date according to prior agreement with lecturer.

Form of exam:oral
Registration for exam:FlexNow
Duration:30min

goals

The Students have gathered an elementary understanding of the mathematically description of plasma physical deposition processes. They are thereby capable of understanding real processes; recognise the dependency of essential parameters and to think about the reasonable design of further processes.

content

"Plasma Technology 2" deals with the fundamental questions of the interaction of plasma with surface areas, with the applicability of those interactions and concrete physical-technical processes and equipment.

The first part of the lecture is about the gas-phase and surface processes in modern plasma-technical processes. On the basis of illustrative images, the physical bases of the important surface processes are obtained.The interaction of gas-phase and surface-kinetics will be shown by the example of the oxidation of a carbon film.

The second part is dedicated to layer deposition by sputtering. The most widely used method of magnetron discharge is discussed. Both, the purely physical and the reactive sputtering of metallic, as well as dielectric layers, are shown. Fundamental questions concerning layer deposition and layer morphology are discussed depending on important parameters.

The plasma assisted chemical vapor deposition (PECVD) forms the third part of the lecture. Here, the deposition of films such as silicon dioxide and amorphous hydrogen-doped silicon, which are so important for microelectronics, are discussed with simple models.

requirements

keine

recommended knowledge

  • Plasmatechnik 1
  • Plasmaoberflächenwechselwirkung (Prof. v. Keudell / Physik)
  • Grundlagen der Chemie

materials

presentation slides:

miscellaneous

Im Som­mer­se­mes­ter 2020 wird die­ser Kurs bis auf wei­te­res als on­line-ge­stütz­te Ver­an­stal­tung ohne Prä­senz­ver­an­stal­tun­gen durch­ge­führt. In­ter­es­sier­te Stu­die­ren­de wen­den sich bitte per E-Mail an Prof. Awakowicz (awa(at)aept.​rub.​de).