course: Plasma Technology for Semiconductor Manufacturing

number:
141364
teaching methods:
lecture with tutorials
media:
computer based presentation
responsible person:
Prof. Dr. Ralf Peter Brinkmann
lecturer:
Dr. Michael Klick (extern)
language:
german
HWS:
3
CP:
4
offered in:
winter term

dates in winter term

  • lecture: Monday the 07.10.2019 from 11:00 to 17.00 o'clock in ID 03/653
  • lecture: Tuesday the 08.10.2019 from 09:00 to 17.00 o'clock in ID 03/653
  • lecture: Wednesday the 09.10.2019 from 09:00 to 17.00 o'clock in ID 03/653
  • lecture: Thursday the 10.10.2019 from 09:00 to 17.00 o'clock in ID 03/653
  • lecture: Friday the 11.10.2019 from 09:00 to 15.30 o'clock in ID 03/653

Exam

All statements pertaining to examination modalities (for the summer/winter term of 2020) are given with reservations. Changes due to new requirements from the university will be announced as soon as possible.

Date according to prior agreement with lecturer.

Form of exam:oral
Registration for exam:Directly with the lecturer
Duration:30min

goals

The students got to know the theoretical and practical aspects of the application of plasma technology in semiconductor and microsystem technology.

content

  1. General Introduction
  • Semiconductor Market
  • The top Plasma Equipment Suppliers
  • Analysis and Control of Manufacturing Costs
  • Demands and Conclusions for future Plasma Equipment
  1. Plasma physics fundamentals
  • Plasma - The fourth state of matter
  • Plasma and external magnetic field
  • Short characterization of non­thermal plasma
  • The mechanisms in the DC discharge
  • RF discharge
  • CCP ­ Capacitively Coupled Plasma
  • Inductively Coupled Plasma
  • Remote and pulsed plasmas
  • RF power in the plasma
  • Plasma process control in the Fab
  • Methods of plasma diagnostics
  1. Plasma Etch Tools
  • The plasma process Overview - Reactor types, Classical parallel plate reactor
  • Capacitively Coupled Plasma reactor type (RIE)
  • Typical parameters of RIE, Control of bulk and sheath by dissipated power
  • Basic etching in MERIE reactor type
  • Approach to Dual Frequency Reactors
  • Approach to and principle of ICP / TCP®
  • Comparison of chamber type; Process requirements and equipment, Common materials and corresponding etching gas
  • Etch chemistry
  • Sputtering
  1. Principle of thin film deposition, PVD & CVD: Sputter deposition
  • The plasma enhanced deposition
  • Nitridation
  1. Process
  • Basic mechanisms: Plasma processes
  • The complexity of plasma processing
  • Mechanism of plasma processes
  • Limitations of plasma processes
  • Gas heating
  • PECVD: Surface and bulk (volume) reactions
  • Conditioning
  • Chamber Design
  • Arcing and particles
  • Cost control by quality and process management

requirements

keine

recommended knowledge

Necessary: Basics of e-technology, Electric and magnetic fields

Helpful is the visit of the following lectures: Plasma technology and Fields, waves, particles

miscellaneous

The lesson will take place as a block course presumably in the summer term 2019.